Interference Effects of Γ and X Electric-Break-Throughs in Inversion Layers of Si

抄録

Interference effects of Γ and X electric-break-throughs in vicinal planes of Si (100) n-channel inversion layers are investigated by the use of the extended zone effective mass equation due to Ohkawa and Uemura. The surface band structure proposed by Tsui et al. is well explained by the interference effects. It is predicted that mini-gaps except the second lowest lying one have a large dependence on an azimuthal component of tilting angles.