Deviations from Matthiessen’s Rule of the Electrical Resistivity Due to Dislocations in Gold

抄録

The electrical resistivity due to dislocations in gold has been measured in the temperature range between liquid helium temperature and 300 K. The deviation from Matthiessen’s rule (DMR) of the dislocation resistivity is different from that of the impurity resistivity in the temperature dependence and the residual resistivity dependence. DMR of the dislocation resistivity cannot be explained by the mechanism due to an anisotropic electron distribution function. Other two mechanisms due to phonon localized modes associated with dislocations and to electron levels localized near dislocations, are considered. In conclusion DMR of the dislocation resistivity is explained fairly well by a model of electron localized levels associated with dislocations.