Variation of the Yield of Photoelectrons Emitted from a Silicon Single Crystal under the Asymmetric Diffraction Condition of X-Rays

抄録

Variations of the yield of silicon K-photoelectrons are observed under two asymmetric diffraction conditions with the asymmetry factors of b and 1/b. The 220 Bragg-case diffractions of silicon are used for Cu Kα radiation in the double-crystal arrangements. Anomalous changes found in two cases show a great difference, which is explained by the fact that the wave fields formed in the crystal in two cases are different from each other. The wave fields formed near the crystal surface are discussed in detail. The observed curves agree fairly well with the calculated ones.