Conduction Band Structure Determined from the g-Values of the Excitons in VI B Transition Metal Dichalcogenides

Abstract

The structure of the conduction bands in the layered MoS₂, MoSe₂, WS₂ and WSe₂ is discussed from the metal ion-dependence of the effective g-values of the A and B excitons with including both the spin-orbit and the interlayer interactions. It is concluded that the Γ₈⁺ conduction band is located below the Γ₉⁻ conduction band in Mo chalcogenides and vice versa in W chalcogenides. The existence of the closely located interlayer split pair bands, arising from the two-dimensional nature of the layered structure, is found to be important for the chemical dependence of the g-values of the excitons.