Anderson Localization and Crystalline Defects of 1T-TaS₂

抄録

The effect of crystalline defects on Anderson localization was investigated and the localization in 1T-TaS₂ was found to be appreciably enhanced by increasing growth temperatures, by reducing the amount of excess sulphur and also by electron beam bombardment.
The electrical resistivity ρ follows ρ∝exp T^−1⁄n as a characteristic state of the variable range hopping conduction in the temperature region of 4 K to the measured lowest temperature 0.1 K. Contrary to the theoretical prediction of n=3 for the two-dimensional system, we found that n=2 is better fitted.