Magnetophonon Resonance in Epitaxial n-InP in High Pulsed Magnetic Fields

抄録

The transverse magnetophonon resonance in high purity epitaxial n-InP was investigated at temperatures between 123 and 270 K. High pulsed magnetic fields up to 40 T were applied to observe the fundamental resonance field. The temperature dependence of the magnetophonon effective mass m₀^* at the bandedge was precisely determined through the analysis of the resonant field positions including the peak for N=1. The determined value of m₀^* is 0.079m₀ at 270 K and 0.084m₀ at 143 K. The magnetic field dependence of the damping factor was found to be \ ildeγ∝B^2⁄3 in magnetic fields higher than 10 T. The temperature dependence of the damping factor was also obtained.