抄録
Photoconductivity spectra of floating-zone Si(P) samples with densities of dislocations 104 or 106–107 cm−2 have been measured in the range from 250 to 400 cm−1 in order to explore shallow dislocation levels. New lines are observed in the annealed Si(P) samples with cutting damage surface. However, these are insensitive to dislocation density, and strongly influenced by the surface condition in the annealing operation. Thus these new lines are to be ascribed to complex centers: a P atom paired with another kind of impurity or point defect which is introduced from cutting damage surface and diffused into the bulk.
