抄録
The magnetic field dependence of ultrasonic attenuation α(B) has been measured for Sb-doped Ge over the impurity concentration region 3.1×1016 to 3.3×1017 cm−3. It is found that the results are sensitive to the impurity concentration (N), in particular the difference in the attenuation coefficient with and without magnetic field, Δα(B)=α(B)−α(0), has a peak around 1.5×1017 cm−3 as a function of the concentration. It is pointed out that the attenuation coefficient per electron in the D− band should increase with the magnetic field. For N>2×1017 cm−3, Δα(B) exhibits the behavior expected from a simple free electron gas model.
