Negative Magnetoresistance and Inelastic Scattering Time in Si-MOS Inversion Layers

抄録

Magnetic field dependence of magnetoconductivity in Si-MOS(001) n-channel inversion layers is analysed by fitting recently developed Kawabata’s theory to experimental data. The theory is applicable to higher magnetic field region than Hikami, Larkin and Nagaoka’s theory and takes the intervalley scattering effect into account. Temperature dependence of the inelastic scattering time τ_ε is discussed in terms of Fukuyama and Abrahams’ theory for electron-electron scattering with large momentum transfer and Altshuler et al.’s theory for that with small momentum transfer.