In Situ Studies on Oxidation of Copper Films By Using ATR Technique

抄録

Oxidation studies of copper films at room temperature have been carried out by measuring the ATR spectra involving information about surface plasmon polariton characteristics. Oxidation is initially rapid, but after 10 to 20 minutes, drops to a negligible value, a stable film being formed ∼2.7 nm thick. It has been furthermore confirmed that copper oxide films formed in 20 Torr of oxygen at room temperature are composed of a mixture of Cu and CuO_0.67 (gross defect structure of Cu₂O) in the first stage of oxidation, but the final composition becomes CuO_0.67.