Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Anomalous Magnetoresistance in the Field Parallel to the Interface in Si-MOS Inversion Layers
Shinji KawajiKenji Maeda
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1985 年 54 巻 12 号 p. 4712-4716

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A positive magnetoresistance which is independent of the field direction has been observed in Si(100) n-channel inversion layers. Magnetic field and temperature dependences of the magnetoconductivity in the field parallel to the interface have been measured in the field up to 1.7 T at temperatures between 4.2 K and 1.1 K. The magnetoconductivity Δσ⁄⁄(B)⁄σ(0) is described as a function of B⁄(T−θ), where the characteristic temperature θ depends on the conductivity and θ<0. No existing theory can explain the experimental results.
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