Correspondence between Photoluminescence and Cyclotron Resonance for Stressed Zn-Doped Ge
1986 年 55 巻 6 号 p. 2064-2069
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1986 年 55 巻 6 号 p. 2064-2069
Reinterpretation of old cyclotron resonance results for Zn-doped Ge is made in terms of bound excitons as evidenced from photoluminescence experiments. Photoluminescence observation of the dissociation of excitons from Zn impurities on application of uniaxial stress is directly corresponding with the enhancement and narrowing of the cyclotron resonance signal obtained from the same Zn-doped Ge crystal under stress.
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