1986 年 55 巻 8 号 p. 2777-2782
Transverse magnetoresistance in bismuth single crystals doped with 0.021 to 2.12 atomic % antimony has been measured in high magnetic fields up to 13 Tesla at low temperatures down to 0.5 K. Enhanced Shubnikov-de Haas oscillation has been observed within the doping level of 0.021 to 0.38 atomic % of antimony. Measured magnetoresistivity was converted into magnetoconductivity, which was compared with our previously obtained magnetoconductivity in ionized impurity doped bismuth. As a result the magnetoconductivity caused by neutral impurity scattering proved to be several orders of magnitude smaller than the case of ionized impurity scattering.
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