Structural Changes of Amorphous GeTe2 Films by Annealing (Formation of Metastable Crystalline GeTe2 Films)
1987 年 56 巻 1 号 p. 158-162
詳細
1987 年 56 巻 1 号 p. 158-162
Amorphous GeTe2 films with the thickness ∼0.5 μm, prepared by sputtering technique, transform into the crystalline GeTe2 films with the isomorphic structure to β-cristobalite, cubic SiO2, at Ta(annealing temperature)=200°C. The cubic phase of GeTe2 is metastable and decomposes into the mixed crystal of GeTe and Te at Ta=250°C.
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