Properties of Indium Film Deposited at Liquid Nitrogen Temperature
1987 年 56 巻 1 号 p. 291-294
詳細
1987 年 56 巻 1 号 p. 291-294
Irreversible resistivities of as-deposited indium films during annealing process were measured. Using Vand’s theory, an activation energy of defect, E, and the initial lattice distortion energy function, F0(E), were evaluated. The spectrum of F0(E) showed two peaks, one at the activation energy Emax1=0.30 eV, and the other at Emax2=0.45 eV. The dependence of the activation energies on the film thickness were not observed. But the values of F0(Emax1) and F0(Emax2) were dependent on the film thickness. It is suggested that the peak at Emax2 is related to the stress introduced during the annealing process.
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