1987 年 56 巻 10 号 p. 3425-3428
Diffuse spots slightly displaced from the (\sqrt3×\sqrt3) positions were observed in the high-temperature (1×1) state of Si (111) by low-energy electron diffraction. The spots showed threefold 3m symmetry and rotated around the \sqrt3 positions with changes in primary energy. These are reproduced by kinematic calculations for a surface configuration with adatoms distributed randomly over both the threefold-hollow and threefold atop sites of a (1×1) substrate with the exclusion of forming bonds with a common substrate atoms.
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