Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Theoretical Study of the Optical-Absorption Edge in Amorphous Semiconductors
Fumiko YonezawaFumitoshi Sato
著者情報
ジャーナル 認証あり

1988 年 57 巻 5 号 p. 1797-1813

詳細
抄録
With a view to studying the properties of the optical-absorption edge in a–Si, we calculate in the CPA the density of states (DOS), the absorption spectra and the spectral density on the basis of the site-disordered Abe-Toyozawa model. As the probability distribution for site disorder, we use the bilateral exponential distribution and the distribution defined by an exponential factor with the fourth-order power in its argument as well as the common Gaussian distribution. Our assertion is that, to make the model realistic, we must choose the degree of disorder small enough relative to the band width such that we can identify the three regions of absorption with high, intermediate and low energies. The intermediate region in this case universally shows an exponential behaviour, irrespective of the type of the probability distribution of “static” disorder. We compare the absorption spectra I(E) calculated from the Kubo formula with the convolution Iconv(E) in which the k-selection rule is completely relaxed. We clarify the conditions under which Iconv(E) serves as a good approximation of I(E).
著者関連情報

この記事は最新の被引用情報を取得できません。

© THE PHYSICAL SOCIETY OF JAPAN
前の記事 次の記事
feedback
Top