Metallization of Mo-Cluster Compound Ga0.5Mo2S4 at 38 GPa

Masaki Asano; Ritsu Tanaka; Shoichi Endo; Shigemi Wada; Satoru Noguchi; Kiichi Okuda

doi:10.1143/JPSJ.59.2179

Journal of the Physical Society of Japan

Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015

Metallization of Mo-Cluster Compound Ga_0.5Mo₂S₄ at 38 GPa

Masaki Asano, Ritsu Tanaka, Shoichi Endo, Shigemi Wada, Satoru Noguchi, Kiichi Okuda

著者情報

キーワード: Ga_0.5Mo₂S₄, Mo-cluster, high pressure, metallization

ジャーナル認証あり

1990 年 59 巻 6 号 p. 2179-2182

DOI https://doi.org/10.1143/JPSJ.59.2179

詳細

抄録

The electric resistance of Ga_0.5Mo₂S₄ containing tetrahedral Mo-clusters was measured at high pressure up to 42 GPa and low temperature down to 2 K. The temperature coefficient of the resistance changed from negative to positive at 38 GPa, which indicates that metallization was induced with vanishing of the energy gap.