Pressure Dependence of the Electrical Resistivity and T_N of the Ternary Uranium Antiferromagnets UNiSn, UPdIn and UPdSn

抄録

The effects of pressure on the resistivity ρ and the Néel temperature T_N of UNiSn, UPdIn and UPdSn have been investigated up to 25 kbar. With the applied pressure, semiconducting behavior in UNiSn is suppressed and the presence of the Kondo like effect is revealed in UPdSn. Positive dT_N⁄dP of the ternary UTX is compared with that of binary U compounds and discussed in terms of the interatomic spacing of U atoms.