抄録
Light-induced phenomena in a-Si1−xNx:H films with x of the range of 0<x≤0.28 were studied by photoluminescence (PL) and optically detected magnetic resonance (ODMR) measurements. The experimental results on the spectral dependences of PL and ODMR for various excitation intensities measured before and after prolonged illumination in a-Si1−xNx:H films are interpreted in terms of a newly introduced nonradiative center (E* center) as well as other radiative and nonradiative centers. The energy levels and nature of these centers are discussed. We obtained evidence for the creation of both radiative and nonradiative centers by prolonged illumination, whose creation rate depends on the substrate temperature for preparation, particularly the hydrogen content, as well as the nitrogen content.
