Time-Resolved Spectroscopy of Photoluminescence in Hydrogenated Amorphous Silicon

抄録

Temperature and excitation intensity dependence of time-resolved photoluminescence (PL) in hydrogenated amorphous silicon (a-Si:H) are investigated to clarify thermalization processes in the band tail states. Red shift of the PL spectra and changes of the PL decay curves associated with increasing temperature are observed. On the other hand, blue shift of the spectra is found to occur at temperatures of 4–150 K with increasing excitation intensity. These results are explained with variable range hopping of carriers in the localized states.