1993 年 62 巻 9 号 p. 3031-3034
The oscillator strength of excitons in InGaAs/GaAs single quantum wells is studied for the first time by reflectance measurements using a Fourier transform spectrometer. Decrease of the oscillator strength of the zero phonon line at higher temperatures is found and analyzed using the temperature dependence of a modified Debye-Waller factor with an averaged phonon mode. For a sample of L=140 Å, the oscillator strength is estimated to be 5.1×10−4 Å−2. The well width dependence of the oscillator strength is found to reach a maximum at a critical well width. We also observe anomalies in the oscillator strength and linewidth at temperatures lower than 50 K.
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