1993 年 62 巻 9 号 p. 3172-3180
We investigated the effect of compensation on the electronic properties of heavily phosphorus doped silicon. A sample just in the metallic region was compensated by irradiation with fast neutrons to the intermediate region. A detailed study of 29Si NMR (Knight shift, spin-lattice relaxation time T1) was carried out together with a measurement of the static magnetic susceptibility. We obtained the result that in our compensated samples the Knight shift becomes larger than in the uncompensated case. Coupled with results of T1 and magnetic susceptibility we conclude that as a result of compensation the donor wave function extends spatially. The NMR measurements were made in the temperature region of 0.5–0.04 K.
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