Space Charge Effect in the Oxide Cathode Layer (II)

抄録

In the previous paper it was pointed out by the writer that the space charge may be formed up in the oxide cathode layer and the Schottky type behavior of the oxide cathode can be well understood as an effect of this space charge. In this paper the theory was extended to the retarding field region and the complete static character of a planar diode was calculated, with some amendment of the theory.
In an accelerating field the static character of the diode depends decisively on the space charge effect in the cathode layer. In a retarding field, however, the space charge has little effect on the static character but the amount of the space charge varies considerably with plate voltages.