Application of Focused Ion Beam Technique to Thin-Film Sample Preparation for Auger Electron Spectroscopy-Sputter Depth Profiling of Deep Interfaces

Abstract

  For analysis of deep interfaces with high depth resolution, we proposed a technique to prepare thin samples by a focused ion beam (FIB) and performed Auger electron spectroscopy (AES)-sputter depth profiling of processes samples. We can prepare samples of thin interface layers existing deep in the sample and obtain sputter depth profiles without deterioration of depth resolution. A comparison of cross-sectional line profiles of multilayers with the depth profiles obtained by the present technique revealed that the contamination and oxidation of the surface of the cross-sectional sample provides incorrect information of existence of carbon or oxide layer which do not exist actually. We also found out that depth profiling of non-conductive materials can obtained without influence of charge-up.