Development of Si/SiO₂ Multilayer Type AFM Tip Characterizers

Abstract

A new type of AFM tip characterizer used for characterizing nanostructures in the 10 nm to 100 nm range was developed. The characterizer was fabricated by preferential etching the edge of a cross sectioned Si/SiO₂ multilayer. Both isolated line structures and line-and-space structures were fabricated. The structural and practical properties of the fabricated tip characterizer were evaluated, and it was shown that it can be used to characterize AFM tip shapes in the 10 nm to 100 nm range.