Structural Analysis in the Surface of Nitride Semiconductor by Grazing Incidence X-ray Diffraction

Abstract

It is important to elucidate defect and degradation factors of products at the development stage. In order to understand the fluctuations of metal electrode ⁄ semiconductor interface, we performed surface crystallographic analysis of a high- electron-mobility transistor by grazing incidence X-ray diffraction measurement using a synchrotron radiation and a pixel detector with a large dynamics range. The results clearly shows the surface crystal structure change related with the contact resistance fluctuations.