We have been constructing the spectral data processing system named Common Data Processing System (COMPRO) under VAMAS (Versailles Project on Advanced Materials and Standards) umbrella since 1989. COMPRO is designed to be a program to convert an original spectral data file structure to ISO formats, to assess the data processing procedures proposed by scientists, to calibrate energy and intensity scales according to ISO standards, to check a spectrum, and to build both spectra and correction factor databases. In this system, the spectral data acquired on different instruments and/or computers can be compared to one another.
COMPRO has been upgraded many times, and the latest one is Version 12 (COMPRO10), which runs on Windows 7, 8 and 10. In this lectures, the usage of COMPRO12 will be explained with the basic introduction of algorithms used in COMPRO.

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This article describes the development of MassBank in terms of the historical background why mass spectrometry has required MassBank, concepts, metadata, data redundancy, tools helping data contributors who construct MassBank records, data search services, copyright and Creative Commons License of Mass Bank records, contribution from the Mass Spectrometry Society of Japan, Open Science of mass spectral data, international collaborations, data quality of public repository, new MassBank, and future direction of mass spectral databases.

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X-ray photoelectron spectroscopy (XPS) has recently been used in various industrial fields because it is a useful analytical method for investigating the nature of the chemical bonding at the surfaces and interfaces of defective products and materials. An analysis of an XPS spectrum requires both the background estimation and peak separation with the results of the analysis generally depending on the restrictions chosen by the analyst. This analyst dependence is one of the biggest problems for the wider practical use of XPS analysis.
To solve this problem, we have recently developed a new algorithm based on the active Shirley method that can effectively estimate both the shape of the background and the automatic peak fitting in the XPS spectrum analysis.
Nevertheless, the new method is still invalid for the application to the XPS spectra that show a large intensity differ ence between the starting point and ending points. In such an XPS spectrum, the estimated background almost intersects to XPS spectrum. The cause of this intersection was found to be the intersection between a tentative background that was initially estimated by the Shirley method and the XPS spectrum. To improve the method, we have introduced a new algorithm that properly selects both initial endpoints for deriving a proper background without intersecting the XPS spectrum. The improved method was named “an active Shirley method with auto-tuning function of both initial endpoints”.
Using our improved algorithm, we have successfully obtained a better background shape compared to the shape obtained by the active Shirley method. In particular, we could estimate a background without an intersection with the divalent Cu 2p XPS spectrum that shows partial overlap with an Auger peak.

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It is widely recognized that, in comparison with conventional Ar⁺ sputter etching, Argon gas cluster ion beam (Ar-GCIB) sputtering provides mild etching of a sample surface because of its low energy per atom and lateral sputtering effect. X-ray photoelectron spectroscopy (XPS) combined with Ar-GCIB has become established as an in-depth analysis technique for organic materials. Considering such advantages, Ar-GCIB irradiation conditions were investigated for removal of organic contaminations on inorganic material surfaces. The bonding state of the native oxide on the Si-substrate surface was employed as an indicator of surface damage. It was found that the incident angle of Ar-GCIB irradiation strongly affects the roughness and damage to the surface. It was also found that the surface contamination layer can be removed without affecting the native oxide film on the Si-substrate when the incident angle is 85° for Ar₁₀₀₀⁺ and 80° for Ar₂₀₀₀⁺, respectively.

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It is important to elucidate defect and degradation factors of products at the development stage. In order to understand the fluctuations of metal electrode ⁄ semiconductor interface, we performed surface crystallographic analysis of a high- electron-mobility transistor by grazing incidence X-ray diffraction measurement using a synchrotron radiation and a pixel detector with a large dynamics range. The results clearly shows the surface crystal structure change related with the contact resistance fluctuations.

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