Abstract
Quantification of XPS and AES analyses requires a theoretical model that relates measured signal intensity with a given quantity describing a studied surface region. Determination of the following quantities and parameters facilitating quantification is addressed here: surface composition, overlayer thickness, and sampling depth of a particular measurement. It is shown that parameterization of quantitative analysis by XPS and AES can based on the emission depth distribution function for the signal electrons. From this function, the formalism for numerous quantitative applications can be derived. Reliable sources of relevant parameters are briefly discussed.
