Abstract
In order to verify the practicality of ISO 14701, the thickness of the silicon oxide film was measured using X-ray photoelectron spectroscopy (XPS) with the standard. The resulting thicknesses were in good agreement with the oxide thickness measured by Transmission Electron Microscope with a relative difference of 1.3 %. The position of the SiO2 peak in the Si 2p spectrum may change due to charging during the XPS measurement, and it may deviate from the specified range in ISO 14701. In this case, it is necessary to focus on minimizing the fitting error according to the amount of charging, rather than the energy range. The procedures described for XPS measurement, peak fitting and the calculation of the oxide thicknesses are easy to understand, and we concluded that ISO 14701 is a practically useful standard.
