Abstract
The mesh replica method is a means of measuring the ion sputtering rate in Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy, and recommendations for its implementation are set forth in ISO/TR 22335. Despite the usefulness of this method, there are few reports on its implementation. In this paper, the results of tracing experiments using the mesh replica method are presented and their implications are considered. In the tracing experiments, Ar+ ion sputtering of the silicon substrate was performed using the mesh replica method by AES. The sputtering depth was measured by stylus profiler. The measured sputtering depth was about the same as that by the Ar+ ion sputtering depth profile analysis using silicon thermal oxide film. The mesh replica method was then performed using a single-hole grid. The shapes of the obtained sputtering craters did not require consideration of the ion irradiation orientation or the scanning orientation of the stylus profiler.
