[volume title in Japanese]
Session ID : 19a-P11-17
Conference information
Host: The Japan Society of Applied Physics
Name : [in Japanese]
Number : 57
Location : [in Japanese]
Date : March 17, 2010 - March 20, 2010
Sub-1 nm EOT La-Al-O higher-k gate dielectrics with low leakage current using band gap engineering
*[in Japanese], [in Japanese], Stephen Brown, Andrew Kellock, Alessandro Callegari, Matthew Copel, Richard Haight, [in Japanese], Vijay Narayanan
Author information
Keywords:
19a-P11-17,
high-k
Details
Article 1st page
