[volume title in Japanese]
Session ID : 19a-P11-23
Conference information
Host: The Japan Society of Applied Physics
Name : [in Japanese]
Number : 57
Location : [in Japanese]
Date : March 17, 2010 - March 20, 2010
Electrical Properties of Hf/HfSiON/p-Si(100) Structure MIS Capacitor by Using ECR-Sputtering
Keywords:
19a-P11-23,
HfON
Details
Article 1st page
