JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 61st JSAP Spring Meeting 2014
Session ID : 20a-F10-12
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Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-doped GeO2 Interfacial Layer
*Choong Hyun LeeCimang LuWenfeng ZhangTomonori NishimuraKosuke NagashioAkira Toriumi
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© 2014 The Japan Society of Applied Physics
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