JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 75th JSAP Autumn Meeting 2014
Session ID : 20a-PA2-10
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The influence of annealing for Si0.99C0.01 S/D n-MOSFET with electron irradiation
*Masato HoriMasashi YoneokaToshiyuki NakashimaEddy SimoenCor ClaeysIsao TsunodaKenichiro Takakura
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Keywords: 20a-PA2-10, MOSFET
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© 2014 The Japan Society of Applied Physics
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