The 76th JSAP Autumn Meeting 2015
Session ID : 15p-4F-18
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Autumn Meeting
Number : 76
Location : [in Japanese]
Date : September 13, 2015 - September 16, 2015
The device fabricated on hetero-diamond film on Si substrate: I-V characteristics of the diamond Schottky barrier diodes
*Hiroyuki Kawashima, Noguchi Hitoshi, Ogura Masahiko, Matsumoto Tsubasa, Kato Hiromitsu, Makino Toshiharu, Shirai Shozo, Takeuchi Daisuke, Yamasaki Satoshi
Author information
Details
Article 1st page
