The 76th JSAP Autumn Meeting 2015
Session ID : 16a-1C-1
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Autumn Meeting
Number : 76
Location : [in Japanese]
Date : September 13, 2015 - September 16, 2015
Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs
*Minsoo Kim, Yuki K. Wakabayashi, Ryosho Nakane, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi
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