The 76th JSAP Autumn Meeting 2015
Session ID : 16a-4C-4
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Autumn Meeting
Number : 76
Location : [in Japanese]
Date : September 13, 2015 - September 16, 2015
An initial failure analysis of the low breakdown voltage of GaN p-n diodes fabricated on free-standing GaN substrates (1)
*FUMIMASA HORIKIRI, Yoshinobu Narita, Takehiro Yoshida, Hiroshi Ohta, Tomoyoshi Mishima, Tohru Nakamura
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