JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 63rd JSAP Spring Meeting 2016
Session ID : 21a-S422-10
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Channel Electron Effective Mass Dependence of Source-Drain Direct Tunneling Current in III-V n-MOSFETs with Sub-10 nm Gate Lengths
*Shinya KatagiMasaki OhmoriHideaki TsuchiyaMatsuto Ogawa
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© 2016 The Japan Society of Applied Physics
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