JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 63rd JSAP Spring Meeting 2016
Session ID : 20p-H121-8
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Development of low concentration doping technique for nitride semiconductors
*Yasuaki ArakawaKohei UenoJitsuo OhtaHiroshi Fujioka
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Keywords: 20p-H121-8, GaN, Sputtering
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© 2016 The Japan Society of Applied Physics
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