The 77th JSAP Autumn Meeting 2016
Session ID : 14p-A26-11
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Autumn Meeting
Number : 77
Location : [in Japanese]
Date : September 13, 2016 - September 16, 2016
Electrical properties of H-terminated diamond field effect transistors with AlN gate material sputter-deposited under Ar+N2 atmosphere
Details
Article 1st page
