JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 77th JSAP Autumn Meeting 2016
Session ID : 14a-P6-2
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Study on selective-area formation of GaN porous structures
*Satoru MatsumotoYusuke KumazakiTaketomo Sato
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Keywords: 14a-P6-2, GaN, semiconductor
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© 2016 The Japan Society of Applied Physics
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