The 77th JSAP Autumn Meeting 2016
Session ID : 14a-P6-9
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Autumn Meeting
Number : 77
Location : [in Japanese]
Date : September 13, 2016 - September 16, 2016
Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and characterization of gate leakage characteristics
Details
Article 1st page
