The 77th JSAP Autumn Meeting 2016
Session ID : 16a-P5-27
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Autumn Meeting
Number : 77
Location : [in Japanese]
Date : September 13, 2016 - September 16, 2016
Growth of Si-doped GaN single-crystalline layer by UHV sputter epitaxy
Details
Article 1st page
