JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 64th JSAP Spring Meeting 2017
Session ID : 15a-503-2
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Growth of AlGaN (0001) epitaxial layer on Ga2O3 (-201) substrate with SiNx-dots mask
*YOSHIKATSU MORISHIMAHIDEKI HIRAYAMASHIGENOBU YAMAKOSHI
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Keywords: 15a-503-2, AlGaN, MOCVD, Ga2O3
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© 2017 The Japan Society of Applied Physics
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