JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 64th JSAP Spring Meeting 2017
Session ID : 15p-503-7
Conference information

Growth rate dependent near ideal vertical-type Schottky barrier diodes fabricated on MOCVD-GaN/GaN substrates
*Li-wen SANGBing RenMeiyong LiaoMasatomo SumiyaYasuo Koide
Author information
Keywords: 15p-503-7, GaN
CONFERENCE PROCEEDINGS FREE ACCESS

Details
Article 1st page
Content from these authors
© 2017 The Japan Society of Applied Physics
Previous article Next article
feedback
Top