JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 64th JSAP Spring Meeting 2017
Session ID : 16a-503-3
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Fabrication of red LED with Eu-doped GaN active layer using rf-plasma-assisted molecular beam epitaxy method
*Kensuke TomoyasuSekiguchi HirotoTateishi HirokiYamane KeisukeOkada HiroshiWakahara Akihiro
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Keywords: 16a-503-3, GaN, Eu, LED
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© 2017 The Japan Society of Applied Physics
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