JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 79th JSAP Autumn Meeting 2018
Session ID : 19a-146-6
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Investigation on the trap states at p-GaN MO(I)S interface with different gate dielectric layers
*Li-wen SANGBing RenMeiyong LiaoYasuo KoideMasatomo Sumiya
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Keywords: 19a-146-6, p-GaN, MIS, MOS
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© 2018 The Japan Society of Applied Physics
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