JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 66th JSAP Spring Meeting 2019
Session ID : 9a-M121-11
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Measurement accuracy of net donor concentration of low-doped n-type GaN by C-V analysis of lateral Schottky diode structure
*Shohei RokunoKeisuke SakaoMasahiro HoritaJun Suda
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© 2019 The Japan Society of Applied Physics
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