The 66th JSAP Spring Meeting 2019
Session ID : 9p-S422-11
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Spring Meeting
Number : 66
Location : [in Japanese]
Date : March 09, 2019 - March 12, 2019
Demonstration of High-Speed Growth of φ4 inch Thick 4H-SiC Single Crystals by High Temperature Chemical Vapor Deposition (HTCVD) Method
*Yuichiro Tokuda, Hironari Kuno, Hideyuki Uehigashi, Takeshi Okamoto, Takahiro Kanda, Nobuyuki Ohya, Norihiro Hoshino, Isaho Kamata, Hidekazu Tsuchida
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